NTI Yield Analysis Engineer - Singapur, Singapore - Micron

    Micron
    Micron Singapur, Singapore

    5 days ago

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    Description

    Join our team and be part of a mission to revolutionize how information is used to enhance life.

    Join a diverse team dedicated to innovation for customers and partners, from virtual reality to neural networks. We prioritize integrity, sustainability, and giving back to our communities to drive the innovation we seek.

    We are hiring for the position of NTI Yield Analysis Engineer (Job Reference: JR56196).

    Your responsibilities will include:

    • Identifying yield issues in NAND development and defining unique metrics for quantification.
    • Collaborating with multiple teams to address yield, qual, and reliability issues across various tech-nodes and designs.
    • Conducting statistical analysis to improve product yield and quality.
    • Driving data mining, correlation studies, and root cause analysis for yield issues.
    • Continuously enhancing inline detection methods.
    • Developing unique parametric/probe bins for new fail modes.
    • Optimizing layout and developing innovative solutions.
    • Extracting and automating data extraction for improved efficiency.
    • Supporting the transfer of new technology fundamentals to manufacturing fab.

    Successful candidates will have:

    • 3-5 years of experience in semiconductor industry (Process Integration, Yield Enhancement, etc.).
    • Expertise in nonvolatile memories with a strong understanding of NAND technologies.
    • Curiosity and a passion for independent learning.
    • Exposure to R&D and manufacturing.
    • Proficiency in Python, JavaScript, C or C++.
    • Self-motivation and ability to work in a dynamic environment.
    • Experience in coordinating cross-functional teams.
    • Strong analytical, communication, and reporting skills.
    • Willingness to travel for collaborative R&D work.

    Education:

    BS, MS/PhD in Electrical Engineering, Microelectronics, Data Science, or related field.